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We observe that a wide variety of design objectives and constraints have a special form, i.e., they are posynomial functions of the design variables. The excellent performance paves the way to achieving low-cost, CMOS-based, Ge/Si APDs operating at data rates of 40 Gb s−1 or higher, where the performance of III-V APDs is severely limited.read more read lessĪbstract: We describe a new method for determining component values and transistor dimensions for CMOS operational amplifiers (op-amps). A monolithically grown Ge/Si avalanche photodetectors (APD) with a gain–bandwidth product of 340 GHz, the highest value for any APDs operating at 1,300 nm, and a sensitivity equivalent to commercially available III-V compound APDs is reported. This work paves the way for the future development of low-cost, CMOS-based germanium/silicon avalanche photodetectors operating at data rates of 40 Gb s−1 or higher. This is the highest reported gain–bandwidth product for any avalanche photodetector operating at 1,300 nm and a sensitivity that is equivalent to mature, commercially available III–V compound avalanche photodetectors. Here, we report a monolithically grown germanium/silicon avalanche photodetector with a gain–bandwidth product of 340 GHz, a keff of 0.09 and a sensitivity of −28 dB m at 10 Gb s−1. Although this is true in most cases, one of the exceptions is the area of avalanche photodetectors, where silicon's material properties allow for high gain with less excess noise than InP-based avalanche photodetectors and a theoretical sensitivity improvement of 3 dB or more. It has often been assumed, however, that their performance is inferior to InP-based devices. Abstract: Significant progress has been made recently in demonstrating that silicon photonics is a promising technology for low-cost optical detectors, modulators and light sources1,2,3,4,5,6,7,8,9,10,11,12.